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TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications * Complementary to TIP125/126/127 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP120 : TIP121 : TIP122 Value 60 80 100 60 80 100 5 5 8 120 2 65 150 - 65 ~ 150 Units V V V V V V V A A mA W W C C R1 R2 E Equivalent Circuit C B VCEO Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG R1 8k R2 0.12k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122 Collector Cut-off Current : TIP120 : TIP121 : TIP122 ICBO Collector Cut-off Current : TIP120 : TIP121 : TIP122 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 3V,IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 3V, IC = 3A VCB = 10V, IE = 0, f = 0.1MHz 1000 1000 2.0 4.0 2.5 200 V V V pF 0.2 0.2 0.2 2 mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 0.5 0.5 0.5 mA mA mA Test Condition IC = 100mA, IB = 0 Min. 60 80 100 Max. Units V V V ICEO * Pulse Test : PW300s, Duty cycle 2% (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TIP120/121/122 Typical characteristics 10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 4V 3.5 IC = 250IB 3.0 hFE, DC CURRENT GAIN 2.5 1000 2.0 1.5 V BE(sat) 1.0 VCE(sat) 0.5 0.1 100 0.1 1 10 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 f=0.1MHz s 0u 10 us 0 50 Cob[pF] Cib[pF], CAPACITANCE s 1m IC[A], COLLECTOR CURRENT s 5m C D 1 100 Cob Cib 0.1 TIP120 TIP121 TIP122 10 0.1 1 10 100 0.01 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Output and Input Capacitance vs. Reverse Voltage Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TIP120/121/122 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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